· 供应链分析

解析AI芯片散热瓶颈:CTE不匹配致翘曲,AlSiC成Rubin架构候选方案。

中文翻译

熔点是完全无关的信息。向2000W功率演进导致的问题源于热膨胀系数(CTE)不匹配。 铜的膨胀速度快得多,这会导致翘曲。铝硅碳化物(AlSiC)并非“新”材料,因为它早已用于高铁到高超音速导弹等领域。 只是碰巧在Rubin架构世代出现了新的应用场景,而在Blackwell架构中并不需要它。 实现路径只有几种,AlSiC只是可能的候选方案之一。

英文原文

Melting point is completely irrelevant information. The move to 2000W causes stress due to CTE mismatch. Copper expands multitudes faster, which causes warpage. AlSiC isn't "new" since it's been around for high speed rails to hypersonic missiles. It just so happens that there's a new use case with Rubin generations where it wasn't needed with blackwell. There are single digit different ways to go about it, AlSiC is just one of the likely candidates.

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